2SJ360(TE12L,F) Toshiba Semiconductor and Storage

Description: MOSFET P-CH 60V 1A PW-MINI, Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: PW-MINI, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 730mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR).