Технічний опис 2SJ668(TE16L1,NQ) TOSHIBA
Description: MOSFET P-CHANNEL 60V 5A PW-MOLD, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Obsolete, Supplier Device Package: PW-MOLD, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 20W (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C.
Інші пропозиції 2SJ668(TE16L1,NQ)
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| 2SJ668(TE16L1,NQ) | Toshiba Semiconductor and Storage |
 Description: MOSFET P-CHANNEL 60V 5A PW-MOLDMounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Obsolete Supplier Device Package: PW-MOLD Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
2SJ668(TE16L1,NQ) | Toshiba |
MOSFET MOSFET P-Ch 60V 5A Rdson=0.17Ohm |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. |
 |
2SJ668(TE16L1,NQ) | TOSHIBA |
Description: TOSHIBA - 2SJ668(TE16L1,NQ) - Leistungs-MOSFET, p-Kanal, 60 V, 5 A, 0.17 ohm, TO-252 (DPAK), Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60 Dauer-Drainstrom Id: 5 Qualifikation: - MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 20 Gate-Source-Schwellenspannung, max.: 2 Verlustleistung: 20 Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.17 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.17 SVHC: No SVHC (15-Jun-2015) |
товару немає в наявності |
В кошику од. на суму грн. |
| 2SJ668(TE16L1,NQ) |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CHANNEL 60V 5A PW-MOLD
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: PW-MOLD
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Description: MOSFET P-CHANNEL 60V 5A PW-MOLD
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: PW-MOLD
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
товару немає в наявності
В кошику
од. на суму грн.
| 2SJ668(TE16L1,NQ) |
|
Виробник: Toshiba
MOSFET MOSFET P-Ch 60V 5A Rdson=0.17Ohm
MOSFET MOSFET P-Ch 60V 5A Rdson=0.17Ohm
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| 2SJ668(TE16L1,NQ) |
|
Виробник: TOSHIBA
Description: TOSHIBA - 2SJ668(TE16L1,NQ) - Leistungs-MOSFET, p-Kanal, 60 V, 5 A, 0.17 ohm, TO-252 (DPAK), Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60
Dauer-Drainstrom Id: 5
Qualifikation: -
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 20
Gate-Source-Schwellenspannung, max.: 2
Verlustleistung: 20
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: p-Kanal
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 0.17
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.17
SVHC: No SVHC (15-Jun-2015)
Description: TOSHIBA - 2SJ668(TE16L1,NQ) - Leistungs-MOSFET, p-Kanal, 60 V, 5 A, 0.17 ohm, TO-252 (DPAK), Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60
Dauer-Drainstrom Id: 5
Qualifikation: -
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 20
Gate-Source-Schwellenspannung, max.: 2
Verlustleistung: 20
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: p-Kanal
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 0.17
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.17
SVHC: No SVHC (15-Jun-2015)
товару немає в наявності
В кошику
од. на суму грн.