Технічний опис 2SJ668(TE16L1,NQ) TOSHIBA
Description: MOSFET P-CHANNEL 60V 5A PW-MOLD, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 170mOhm @ 2.5A, 10V, Power Dissipation (Max): 20W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: PW-MOLD, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V.
Інші пропозиції 2SJ668(TE16L1,NQ)
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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2SJ668(TE16L1,NQ) | Виробник : Toshiba |
 Trans MOSFET P-CH Si 60V 5A 3-Pin(2+Tab) New PW-Mold T/R |
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2SJ668(TE16L1,NQ) | Виробник : TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5A; 20W; DPAK Mounting: SMD Features of semiconductor devices: ESD protected gate Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 0.12Ω Type of transistor: P-MOSFET Drain current: -5A Drain-source voltage: -60V Power dissipation: 20W Case: DPAK Polarisation: unipolar Kind of package: reel; tape кількість в упаковці: 2000 шт |
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| 2SJ668(TE16L1,NQ) | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET P-CHANNEL 60V 5A PW-MOLD Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 2.5A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: PW-MOLD Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V |
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2SJ668(TE16L1,NQ) | Виробник : Toshiba |
MOSFET MOSFET P-Ch 60V 5A Rdson=0.17Ohm |
товар відсутній |
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2SJ668(TE16L1,NQ) | Виробник : TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5A; 20W; DPAK Mounting: SMD Features of semiconductor devices: ESD protected gate Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 0.12Ω Type of transistor: P-MOSFET Drain current: -5A Drain-source voltage: -60V Power dissipation: 20W Case: DPAK Polarisation: unipolar Kind of package: reel; tape |
товар відсутній |