2SK1828TE85LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 50MA SC59
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Supplier Device Package: SC-59
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 40Ohm @ 10mA, 2.5V
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5.5 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): 10V
| Кількість | Ціна |
|---|---|
| 13+ | 25.32 грн |
| 21+ | 14.63 грн |
| 100+ | 9.17 грн |
| 500+ | 6.37 грн |
| 1000+ | 5.65 грн |
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Технічний опис 2SK1828TE85LF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 50MA SC59, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50mA (Ta), Rds On (Max) @ Id, Vgs: 40Ohm @ 10mA, 2.5V, Power Dissipation (Max): 200mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 100µA, Supplier Device Package: SC-59, Drive Voltage (Max Rds On, Min Rds On): 2.5V, Vgs (Max): 10V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 5.5 pF @ 3 V.
Інші пропозиції 2SK1828TE85LF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
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2SK1828TE85LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 50MA SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Rds On (Max) @ Id, Vgs: 40Ohm @ 10mA, 2.5V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SC-59 Drive Voltage (Max Rds On, Min Rds On): 2.5V Vgs (Max): 10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 5.5 pF @ 3 V |
товару немає в наявності |
В кошику од. на суму грн. |
| 2SK1828TE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 50MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 40Ohm @ 10mA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-59
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5.5 pF @ 3 V
Description: MOSFET N-CH 20V 50MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 40Ohm @ 10mA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-59
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5.5 pF @ 3 V
товару немає в наявності
В кошику
од. на суму грн.