2SK2009TE85LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 200MA SC59-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50MA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-59-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 3 V
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Технічний опис 2SK2009TE85LF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 200MA SC59-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 50MA, 2.5V, Power Dissipation (Max): 200mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 100µA, Supplier Device Package: SC-59-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 3 V.
Інші пропозиції 2SK2009TE85LF за ціною від 13.39 грн до 46.95 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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2SK2009TE85LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 200MA SC59-3 Rds On (Max) @ Id, Vgs: 2Ohm @ 50MA, 2.5V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 3 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.5V Part Status: Active Supplier Device Package: SC-59-3 Vgs(th) (Max) @ Id: 1.5V @ 100µA Power Dissipation (Max): 200mW (Ta) |
на замовлення 3023 шт: термін постачання 21-31 дні (днів) |
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2SK2009TE85LF | Toshiba |
MOSFETs N-Ch Sm Sig FET Id 0.2A 30V 20V |
на замовлення 25077 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| 2SK2009TE85LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 200MA SC59-3
Rds On (Max) @ Id, Vgs: 2Ohm @ 50MA, 2.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Part Status: Active
Supplier Device Package: SC-59-3
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 200mW (Ta)
Description: MOSFET N-CH 30V 200MA SC59-3
Rds On (Max) @ Id, Vgs: 2Ohm @ 50MA, 2.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Part Status: Active
Supplier Device Package: SC-59-3
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 200mW (Ta)
на замовлення 3023 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.95 грн |
| 10+ | 31.13 грн |
| 100+ | 20.73 грн |
| 500+ | 14.87 грн |
| 1000+ | 13.39 грн |
| 2SK2009TE85LF |
|
Виробник: Toshiba
MOSFETs N-Ch Sm Sig FET Id 0.2A 30V 20V
MOSFETs N-Ch Sm Sig FET Id 0.2A 30V 20V
на замовлення 25077 шт:
термін постачання 21-30 дні (днів)