Технічний опис 2SK2744(F) Toshiba
Description: MOSFET N-CH 50V 45A TO3P, Packaging: Bulk, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 25A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: TO-3P(N), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V.
Інші пропозиції 2SK2744(F)
| Фото | Назва | Виробник | Інформація |
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2SK2744(F) | Виробник : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 50V 45A TO3PPackaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 25A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: TO-3P(N) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V |
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