2SK2993(TE24L,Q) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 20A TO220SM
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SM
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Технічний опис 2SK2993(TE24L,Q) Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 20A TO220SM, Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220SM, Vgs(th) (Max) @ Id: 3.5V @ 1mA, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції 2SK2993(TE24L,Q)
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
2SK2993 (TE24L,Q) | Виробник : Toshiba |
MOSFET |
товару немає в наявності |