2SK3132(Q) Toshiba Semiconductor and Storage

Description: MOSFET N-CH 500V 50A TO3P, Packaging: Tube, Package / Case: TO-3PL, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Ta), Rds On (Max) @ Id, Vgs: 95mOhm @ 25A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 1mA, Supplier Device Package: TO-3P(L), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 10 V.