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Технічний опис 2SK3309(Q) Toshiba
Description: MOSFET N-CH 450V 10A TO220FL, Package / Case: TO-220-3, Short Tab, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 450 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220FL, Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 65W (Tc), Rds On (Max) @ Id, Vgs: 650mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole.
Інші пропозиції 2SK3309(Q)
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
2SK3309(Q) | Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 450V 10A TO220FLPackage / Case: TO-220-3, Short Tab Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 450 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220FL Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole |
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 |
2SK3309 (Q) | Toshiba |
MOSFET |
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| 2SK3309(Q) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 10A TO220FL
Package / Case: TO-220-3, Short Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 450 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FL
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Description: MOSFET N-CH 450V 10A TO220FL
Package / Case: TO-220-3, Short Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 450 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FL
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
товару немає в наявності
В кошику
од. на суму грн.