2SK3466(TE24L,Q) Toshiba Semiconductor and Storage

Description: MOSFET N-CH 500V 5A 4TFP, Packaging: Tape & Reel (TR), Package / Case: SC-97, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 5A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: 4-TFP (9.2x9.2), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V.