2SK3662(F) Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 35A TO220NIS, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), Rds On (Max) @ Id, Vgs: 12.5mOhm @ 18A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-220NIS, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 10 V.