Технічний опис 30JL2C41(F) TOSHIBA
Description: DIODE ARRAY GP 600V 15A TO3P, Packaging: Bulk, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 15A, Supplier Device Package: TO-3P(N), Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V.
Інші пропозиції 30JL2C41(F)
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
![]() |
30JL2C41(F) | Виробник : Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 600V 15A TO3P Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-3P(N) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
товару немає в наявності |