Технічний опис 30JL2C41(F) TOSHIBA
Description: DIODE ARRAY GP 600V 15A TO3P, Current - Reverse Leakage @ Vr: 50 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: TO-3P(N), Current - Average Rectified (Io) (per Diode): 15A, Diode Configuration: 1 Pair Common Cathode, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Bulk.
Інші пропозиції 30JL2C41(F)
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
30JL2C41(F) | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 600V 15A TO3P Current - Reverse Leakage @ Vr: 50 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-3P(N) Current - Average Rectified (Io) (per Diode): 15A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
| 30JL2C41(F) |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 600V 15A TO3P
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-3P(N)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Bulk
Description: DIODE ARRAY GP 600V 15A TO3P
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-3P(N)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.


