Технічний опис 3N163-E3 Vishay / Siliconix
Description: MOSFET P-CH 40V 50MA TO72, Packaging: Bulk, Package / Case: TO-206AF, TO-72-4 Metal Can, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50mA (Ta), Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V, Power Dissipation (Max): 375mW (Ta), Vgs(th) (Max) @ Id: 5V @ 10µA, Supplier Device Package: TO-72, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 40 V, Input Capacitance (Ciss) (Max) @ Vds: 3.5 pF @ 15 V.
Інші пропозиції 3N163-E3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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3N163-E3 | Виробник : Vishay |
 Trans MOSFET P-CH 40V 0.05A 4-Pin TO-206AF |
товару немає в наявності |
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3N163-E3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 40V 50MA TO72 Packaging: Bulk Package / Case: TO-206AF, TO-72-4 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V Power Dissipation (Max): 375mW (Ta) Vgs(th) (Max) @ Id: 5V @ 10µA Supplier Device Package: TO-72 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 40 V Input Capacitance (Ciss) (Max) @ Vds: 3.5 pF @ 15 V |
товару немає в наявності |