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Технічний опис 3SK291(TE85L,F) Toshiba
Description: RF MOSFET 6V SMQ, Current - Test: 10 mA, Voltage - Test: 6 V, Voltage - Rated: 12.5 V, Supplier Device Package: SMQ, Noise Figure: 2.5dB, Technology: MOSFET (Metal Oxide), Gain: 22.5dB, Configuration: N-Channel Dual Gate, Frequency: 800MHz, Mounting Type: Surface Mount, Current Rating (Amps): 30mA, Package / Case: SC-61AA, Packaging: Tape & Reel (TR).
Інші пропозиції 3SK291(TE85L,F)
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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3SK291(TE85L,F) | Виробник : Toshiba Semiconductor and Storage |
Description: RF MOSFET 6V SMQ Packaging: Cut Tape (CT) Package / Case: SC-61AA Current Rating (Amps): 30mA Mounting Type: Surface Mount Frequency: 800MHz Configuration: N-Channel Dual Gate Gain: 22.5dB Technology: MOSFET (Metal Oxide) Noise Figure: 2.5dB Supplier Device Package: SMQ Voltage - Rated: 12.5 V Voltage - Test: 6 V Current - Test: 10 mA |
товару немає в наявності |
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3SK291(TE85L,F) | Виробник : Toshiba Semiconductor and Storage |
Description: RF MOSFET 6V SMQ Current - Test: 10 mA Voltage - Test: 6 V Voltage - Rated: 12.5 V Supplier Device Package: SMQ Noise Figure: 2.5dB Technology: MOSFET (Metal Oxide) Gain: 22.5dB Configuration: N-Channel Dual Gate Frequency: 800MHz Mounting Type: Surface Mount Current Rating (Amps): 30mA Package / Case: SC-61AA Packaging: Tape & Reel (TR) |
товару немає в наявності |