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Технічний опис AIMW120R045M1 Infineon Technologies
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W, Type of transistor: N-MOSFET, Technology: CoolSiC™; SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 36A, Pulsed drain current: 130A, Power dissipation: 114W, Case: TO247, Gate-source voltage: -7...20V, On-state resistance: 75mΩ, Mounting: THT, Kind of package: tube, Kind of channel: enhancement.
Інші пропозиції AIMW120R045M1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| AIMW120R045M1XKSA1 | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W Type of transistor: N-MOSFET Technology: CoolSiC™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 36A Pulsed drain current: 130A Power dissipation: 114W Case: TO247 Gate-source voltage: -7...20V On-state resistance: 75mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |
| AIMW120R045M1 | Infineon Technologies | Trans MOSFET N-CH SiC 1.2KV 52A Automotive 3-Pin(3+Tab) TO-247 Tube |
товару немає в наявності |
В кошику од. на суму грн. |
| AIMW120R045M1XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 130A
Power dissipation: 114W
Case: TO247
Gate-source voltage: -7...20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 130A
Power dissipation: 114W
Case: TO247
Gate-source voltage: -7...20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| AIMW120R045M1 |
Виробник: Infineon Technologies
Trans MOSFET N-CH SiC 1.2KV 52A Automotive 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH SiC 1.2KV 52A Automotive 3-Pin(3+Tab) TO-247 Tube
товару немає в наявності
В кошику
од. на суму грн.