AO4612 ALPHA&OMEGA
Виробник: ALPHA&OMEGA
Transistor N/P-Channel MOSFET; 60V; 20V; 79mOhm/145mOhm; 4,5A/3,2A; 2W; -55°C ~ 150°C; AO4612 TAO4612
кількість в упаковці: 25 шт
на замовлення 200 шт:
термін постачання 28-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 21.51 грн |
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Технічний опис AO4612 ALPHA&OMEGA
Description: MOSFET N/P-CH 60V 4.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.2A, Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 30V, 930pF @30V, Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Інші пропозиції AO4612 за ціною від 21.36 грн до 97.08 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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AO4612 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 60V 4.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.2A Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 30V, 930pF @30V Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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AO4612 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 60/-60V Drain current: 3.6/-2.6A Power dissipation: 1.28W Case: SO8 Gate-source voltage: ±20V On-state resistance: 56/105mΩ Mounting: SMD Gate charge: 4.3/8nC Kind of channel: enhancement Kind of transistor: complementary pair |
на замовлення 3376 шт: термін постачання 14-30 дні (днів) |
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AO4612 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 60V 4.5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.2A Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 30V, 930pF @30V Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 13901 шт: термін постачання 21-31 дні (днів) |
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| AO4612 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 60V 4.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 30V, 930pF @30V
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET N/P-CH 60V 4.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 30V, 930pF @30V
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 25.09 грн |
| 6000+ | 22.40 грн |
| 9000+ | 21.51 грн |
| AO4612 |
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Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 3.6/-2.6A
Power dissipation: 1.28W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 56/105mΩ
Mounting: SMD
Gate charge: 4.3/8nC
Kind of channel: enhancement
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 3.6/-2.6A
Power dissipation: 1.28W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 56/105mΩ
Mounting: SMD
Gate charge: 4.3/8nC
Kind of channel: enhancement
Kind of transistor: complementary pair
на замовлення 3376 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 55.48 грн |
| 16+ | 26.26 грн |
| 25+ | 23.43 грн |
| 100+ | 21.36 грн |
| AO4612 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 60V 4.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 30V, 930pF @30V
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET N/P-CH 60V 4.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 30V, 930pF @30V
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 13901 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 97.08 грн |
| 10+ | 58.71 грн |
| 100+ | 38.90 грн |
| 500+ | 28.51 грн |
| 1000+ | 25.94 грн |