AO4616 ALPHA&OMEGA
Виробник: ALPHA&OMEGA
Transistor N/P-Channel MOSFET; 30V; 20V; 28mOhm/40mOhm; 8A/7A; 2W; -55°C ~ 150°C; AO4616 TAO4616
кількість в упаковці: 25 шт
на замовлення 100 шт:
термін постачання 28-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 20.31 грн |
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Технічний опис AO4616 ALPHA&OMEGA
Description: MOSFET N/P-CH 30V 8A/7A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8A, 7A, Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V, Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Інші пропозиції AO4616 за ціною від 16.62 грн до 100.19 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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AO4616 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 8A/7A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A, 7A Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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AO4616 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 6.5/-6A Power dissipation: 1.3W Case: SO8 Gate-source voltage: ±20V On-state resistance: 20/22mΩ Mounting: SMD Gate charge: 7.5/9.6nC Kind of channel: enhancement |
на замовлення 2439 шт: термін постачання 14-30 дні (днів) |
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AO4616 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 8A/7A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A, 7A Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 12664 шт: термін постачання 21-31 дні (днів) |
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| AO4616 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 8A/7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET N/P-CH 30V 8A/7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 25.97 грн |
| 6000+ | 23.21 грн |
| 9000+ | 22.29 грн |
| AO4616 |
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Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 6.5/-6A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20/22mΩ
Mounting: SMD
Gate charge: 7.5/9.6nC
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 6.5/-6A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20/22mΩ
Mounting: SMD
Gate charge: 7.5/9.6nC
Kind of channel: enhancement
на замовлення 2439 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 42.95 грн |
| 17+ | 25.43 грн |
| 100+ | 19.78 грн |
| 500+ | 17.37 грн |
| 1000+ | 16.62 грн |
| AO4616 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 8A/7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET N/P-CH 30V 8A/7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 12664 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 100.19 грн |
| 10+ | 60.58 грн |
| 100+ | 40.18 грн |
| 500+ | 29.48 грн |
| 1000+ | 26.84 грн |