Технічний опис AOD32326 Alpha & Omega Semiconductor
Description: 30V N-CHANNEL MOSFET, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 46A (Tc), Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V, Power Dissipation (Max): 6.2W (Ta), 45W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V.
Інші пропозиції AOD32326
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| AOD32326 | Sanken Electric USA Inc. |
Description: 30V N-CHANNEL MOSFETPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |
|
AOD32326 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 140A; 18W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 46A Pulsed drain current: 140A Power dissipation: 18W Case: TO252 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| AOD32326 |
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Виробник: Sanken Electric USA Inc.
Description: 30V N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
Description: 30V N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| AOD32326 |
![]() |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 140A; 18W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Pulsed drain current: 140A
Power dissipation: 18W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 140A; 18W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Pulsed drain current: 140A
Power dissipation: 18W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.




