Інші пропозиції AON7804 за ціною від 9.10 грн до 59.00 грн
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AON7804 | ALPHA&OMEGA |
Transistor 2xN-Channel MOSFET; 30V; 20V; 26mOhm; 22A; 17W; -55°C ~ 150°C; AON7804 TAON7804кількість в упаковці: 50 шт |
на замовлення 80 шт: термін постачання 28-31 дні (днів) |
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AON7804 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 9A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN (3x3) Part Status: Active |
на замовлення 425000 шт: термін постачання 21-31 дні (днів) |
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AON7804 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 9A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN (3x3) Part Status: Active |
на замовлення 426604 шт: термін постачання 21-31 дні (днів) |
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AON7804 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 14A; 7W; DFN3x3A DUAL; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 14A Power dissipation: 7W Case: DFN3x3A DUAL Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 7.5nC Kind of channel: enhancement Version: ESD |
на замовлення 7 шт: термін постачання 14-30 дні (днів) |
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| AON7804 |
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Виробник: ALPHA&OMEGA
Transistor 2xN-Channel MOSFET; 30V; 20V; 26mOhm; 22A; 17W; -55°C ~ 150°C; AON7804 TAON7804
кількість в упаковці: 50 шт
Transistor 2xN-Channel MOSFET; 30V; 20V; 26mOhm; 22A; 17W; -55°C ~ 150°C; AON7804 TAON7804
кількість в упаковці: 50 шт
на замовлення 80 шт:
термін постачання 28-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 10.91 грн |
| AON7804 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 9A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
Description: MOSFET 2N-CH 30V 9A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
на замовлення 425000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 12.79 грн |
| 10000+ | 11.36 грн |
| 15000+ | 10.88 грн |
| 25000+ | 9.70 грн |
| 35000+ | 9.40 грн |
| 50000+ | 9.10 грн |
| AON7804 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 9A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
Description: MOSFET 2N-CH 30V 9A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
на замовлення 426604 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 57.47 грн |
| 10+ | 34.33 грн |
| 100+ | 22.21 грн |
| 500+ | 15.93 грн |
| 1000+ | 14.34 грн |
| 2000+ | 13.01 грн |
| AON7804 |
![]() |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 14A; 7W; DFN3x3A DUAL; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Power dissipation: 7W
Case: DFN3x3A DUAL
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 14A; 7W; DFN3x3A DUAL; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Power dissipation: 7W
Case: DFN3x3A DUAL
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of channel: enhancement
Version: ESD
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 59.00 грн |




