AONS32100 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 25V 73A/400A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Ta), 400A (Tc)
Rds On (Max) @ Id, Vgs: 0.73mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15200 pF @ 12.5 V
Description: MOSFET N-CH 25V 73A/400A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Ta), 400A (Tc)
Rds On (Max) @ Id, Vgs: 0.73mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15200 pF @ 12.5 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 60.91 грн |
| 6000+ | 56.45 грн |
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Технічний опис AONS32100 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 25V 73A/400A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 73A (Ta), 400A (Tc), Rds On (Max) @ Id, Vgs: 0.73mOhm @ 20A, 10V, Power Dissipation (Max): 6.2W (Ta), 250W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15200 pF @ 12.5 V.
Інші пропозиції AONS32100 за ціною від 57.95 грн до 135.05 грн
| Фото | Назва | Виробник | Інформація |
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AONS32100 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 25V 73A/400A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 73A (Ta), 400A (Tc) Rds On (Max) @ Id, Vgs: 0.73mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15200 pF @ 12.5 V |
на замовлення 9235 шт: термін постачання 21-31 дні (днів) |
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| AONS32100 | Виробник : ALPHA&OMEGA |
Trans MOSFET N-CH 25V 400A 8-Pin DFN EP AONS32100 TAONS32100 кількість в упаковці: 10 шт |
на замовлення 40 шт: термін постачання 28-31 дні (днів) |
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AONS32100 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 73A; 6.2W; DFN8 Case: DFN8 Mounting: SMD Polarisation: unipolar Kind of channel: enhanced Power dissipation: 6.2W Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain-source voltage: 25V Drain current: 73A On-state resistance: 0.73mΩ Gate charge: 240nC |
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AONS32100 | Виробник : Alpha & Omega Semiconductor |
 Trans MOSFET N-CH 25V 400A 8-Pin DFN EP |
товар відсутній |
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AONS32100 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 73A; 6.2W; DFN8 Case: DFN8 Mounting: SMD Polarisation: unipolar Kind of channel: enhanced Power dissipation: 6.2W Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain-source voltage: 25V Drain current: 73A On-state resistance: 0.73mΩ Gate charge: 240nC |
товар відсутній |