AONX38168 ALPHA&OMEGA
Виробник: ALPHA&OMEGA
25V DUAL ASYMMETRIC N-CHANNEL XS AONX38168 Alpha & Omega Semiconductor Inc. TAONX38168
кількість в упаковці: 2 шт
на замовлення 10 шт:
термін постачання 28-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 178.79 грн |
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Технічний опис AONX38168 ALPHA&OMEGA
Description: MOSFET 2N-CH 25V 25A 8DFN, Supplier Device Package: 8-DFN (5x6), Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.8V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 85nC @ 10V, Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 12.5V, 4520pF @ 12.5V, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc), Drain to Source Voltage (Vdss): 25V, Power - Max: 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Asymmetrical, Mounting Type: Surface Mount, Package / Case: 8-VDFN Exposed Pad, Packaging: Tape & Reel (TR).
Інші пропозиції AONX38168 за ціною від 87.76 грн до 203.46 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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AONX38168 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 25V 25A 8DFN Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 85nC @ 10V Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 12.5V, 4520pF @ 12.5V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc) Drain to Source Voltage (Vdss): 25V Power - Max: 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 245 шт: термін постачання 21-31 дні (днів) |
|
| AONX38168 |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 25V 25A 8DFN
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 85nC @ 10V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 12.5V, 4520pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss): 25V
Power - Max: 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 25V 25A 8DFN
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 85nC @ 10V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 12.5V, 4520pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss): 25V
Power - Max: 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 245 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 203.46 грн |
| 10+ | 127.01 грн |
| 100+ | 87.76 грн |