AONX38168 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 25V 25A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 12.5V, 4520pF @ 12.5V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 85nC @ 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET 2N-CH 25V 25A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 12.5V, 4520pF @ 12.5V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 85nC @ 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
на замовлення 528 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 222.03 грн |
| 10+ | 138.48 грн |
| 100+ | 95.68 грн |
| 500+ | 72.63 грн |
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Технічний опис AONX38168 Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 25V 25A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc), Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 12.5V, 4520pF @ 12.5V, Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 85nC @ 10V, Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.8V @ 250µA, Supplier Device Package: 8-DFN (5x6).
Інші пропозиції AONX38168 за ціною від 170.34 грн до 170.34 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||
|---|---|---|---|---|---|---|---|---|---|
| AONX38168 | Виробник : ALPHA&OMEGA |
25V DUAL ASYMMETRIC N-CHANNEL XS AONX38168 Alpha & Omega Semiconductor Inc. TAONX38168 кількість в упаковці: 2 шт |
на замовлення 10 шт: термін постачання 28-31 дні (днів) |
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| AONX38168 | Виробник : Alpha & Omega Semiconductor |
 25V Dual Asymmetric N-Channel MOSFET |
товару немає в наявності |
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| AONX38168 | Виробник : Alpha & Omega Semiconductor |
25V Dual Asymmetric N-Channel MOSFET |
товару немає в наявності |
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| AONX38168 | Виробник : ALPHA & OMEGA SEMICONDUCTOR | AONX38168 Multi channel transistors |
товару немає в наявності |
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AONX38168 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 25V 25A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 12.5V, 4520pF @ 12.5V Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 85nC @ 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.8V @ 250µA Supplier Device Package: 8-DFN (5x6) |
товару немає в наявності |