AOT410L ALPHA&OMEGA
Виробник: ALPHA&OMEGA
Transistor N-Channel MOSFET; 100V; 25V; 11mOhm; 150A; 333W; -55°C ~ 175°C; AOT410L TAOT410l
кількість в упаковці: 5 шт
на замовлення 5 шт:
термін постачання 28-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 120.42 грн |
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Технічний опис AOT410L ALPHA&OMEGA
Description: MOSFET N-CH 100V 12A/150A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 150A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V, Power Dissipation (Max): 1.9W (Ta), 333W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7950 pF @ 50 V.
Інші пропозиції AOT410L за ціною від 93.37 грн до 253.60 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
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AOT410L | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 167W; TO220 Power dissipation: 167W Gate charge: 107nC Polarisation: unipolar Drain current: 108A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±25V Case: TO220 On-state resistance: 6.5mΩ Mounting: THT |
на замовлення 137 шт: термін постачання 14-30 дні (днів) |
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AOT410L | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 12A/150A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 1.9W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7950 pF @ 50 V |
на замовлення 1360 шт: термін постачання 21-31 дні (днів) |
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| AOT410L |
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Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 167W; TO220
Power dissipation: 167W
Gate charge: 107nC
Polarisation: unipolar
Drain current: 108A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Case: TO220
On-state resistance: 6.5mΩ
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 167W; TO220
Power dissipation: 167W
Gate charge: 107nC
Polarisation: unipolar
Drain current: 108A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Case: TO220
On-state resistance: 6.5mΩ
Mounting: THT
на замовлення 137 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 155.02 грн |
| 5+ | 129.88 грн |
| 25+ | 114.16 грн |
| 100+ | 103.41 грн |
| AOT410L |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 12A/150A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7950 pF @ 50 V
Description: MOSFET N-CH 100V 12A/150A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7950 pF @ 50 V
на замовлення 1360 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 253.60 грн |
| 50+ | 123.62 грн |
| 100+ | 111.94 грн |
| 500+ | 93.37 грн |