APT15GP90KG Microsemi Corporation
Виробник: Microsemi CorporationDescription: IGBT 900V 43A 250W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 15A
Supplier Device Package: TO-220 [K]
IGBT Type: PT
Td (on/off) @ 25°C: 9ns/33ns
Switching Energy: 200µJ (off)
Test Condition: 600V, 15A, 4.3Ohm, 15V
Gate Charge: 60 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 250 W
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Технічний опис APT15GP90KG Microsemi Corporation
Description: IGBT 900V 43A 250W TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 15A, Supplier Device Package: TO-220 [K], IGBT Type: PT, Td (on/off) @ 25°C: 9ns/33ns, Switching Energy: 200µJ (off), Test Condition: 600V, 15A, 4.3Ohm, 15V, Gate Charge: 60 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 43 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 250 W.
Інші пропозиції APT15GP90KG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APT15GP90KG | Виробник : Microchip / Microsemi |
IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single |
товару немає в наявності |