Технічний опис APT20GN60BDQ1G Microchip Technology
Category: THT IGBT transistors, Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3, Type of transistor: IGBT, Technology: Field Stop, Collector-emitter voltage: 600V, Collector current: 24A, Power dissipation: 136W, Case: TO247-3, Gate-emitter voltage: ±30V, Pulsed collector current: 60A, Mounting: THT, Gate charge: 0.12µC, Kind of package: tube, Turn-on time: 19ns, Turn-off time: 290ns, Features of semiconductor devices: integrated anti-parallel diode, кількість в упаковці: 1 шт.
Інші пропозиції APT20GN60BDQ1G
| Фото | Назва | Виробник | Інформація |
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APT20GN60BDQ1G | Виробник : Microchip Technology |
 Trans IGBT Chip N-CH 600V 40A 136W 3-Pin(3+Tab) TO-247 Tube |
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APT20GN60BDQ1G | Виробник : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3 Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 24A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 19ns Turn-off time: 290ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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APT20GN60BDQ1G | Виробник : Microsemi Corporation |
Description: IGBT 600V 40A 136W TO247 |
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| APT20GN60BDQ1G | Виробник : Microchip Technology |
IGBT Transistors FG, IGBT, 600V, 20A, TO-247, RoHS |
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APT20GN60BDQ1G | Виробник : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3 Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 24A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 19ns Turn-off time: 290ns Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |