Технічний опис APT20M22B2VRG Microchip Technology
Description: MOSFET N-CH 200V 100A T-MAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 4V @ 2.5mA, Supplier Device Package: T-MAX™ [B2], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 435 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V.
Інші пропозиції APT20M22B2VRG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| APT20M22B2VRG | Виробник : MICROSEMI |
 TO-247/100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET APT20M22B2кількість в упаковці: 1 шт |
товару немає в наявності |
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APT20M22B2VRG | Виробник : Microsemi Corporation |
Description: MOSFET N-CH 200V 100A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 435 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V |
товару немає в наявності |