APT20M22B2VRG MICROSEMI
Виробник: MICROSEMI
TO-247/100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET APT20M22B2
кількість в упаковці: 1 шт
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Технічний опис APT20M22B2VRG MICROSEMI
Description: MOSFET N-CH 200V 100A T-MAX, Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 435 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: T-MAX™ [B2], Vgs(th) (Max) @ Id: 4V @ 2.5mA, Power Dissipation (Max): 520W (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3 Variant, Packaging: Tube.
Інші пропозиції APT20M22B2VRG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
APT20M22B2VRG | Microsemi Corporation |
Description: MOSFET N-CH 200V 100A T-MAX Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 435 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: T-MAX™ [B2] Vgs(th) (Max) @ Id: 4V @ 2.5mA Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 27 шт В кошику од. на суму грн. |
| APT20M22B2VRG |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 200V 100A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 435 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Description: MOSFET N-CH 200V 100A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 435 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 27 шт
В кошику
од. на суму грн.