Технічний опис APT30GP60B2DLG Microchip Technology
Description: IGBT 600V 100A 463W TMAX, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A, Supplier Device Package: T-MAX™, IGBT Type: PT, Td (on/off) @ 25°C: 13ns/55ns, Switching Energy: 260µJ (on), 250µJ (off), Test Condition: 400V, 30A, 5Ohm, 15V, Gate Charge: 90 nC, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 463 W.
Інші пропозиції APT30GP60B2DLG
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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| APT30GP60B2DLG | Виробник : MICROSEMI |
 T-MAX/INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI APT30GP60кількість в упаковці: 1 шт |
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APT30GP60B2DLG | Виробник : Microsemi Corporation |
Description: IGBT 600V 100A 463W TMAX Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Supplier Device Package: T-MAX™ IGBT Type: PT Td (on/off) @ 25°C: 13ns/55ns Switching Energy: 260µJ (on), 250µJ (off) Test Condition: 400V, 30A, 5Ohm, 15V Gate Charge: 90 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 463 W |
товар відсутній |
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| APT30GP60B2DLG | Виробник : Microchip / Microsemi |
IGBT Transistors Insulated Gate Bipolar Transistor - Resonant Mode - Combi |
товар відсутній |