Технічний опис APT30GS60BRDLG Microsemi
Description: IGBT 600V 54A 250W TO247, Switching Energy: 570µJ (off), Td (on/off) @ 25°C: 16ns/360ns, IGBT Type: NPT, Supplier Device Package: TO-247, Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Power - Max: 250 W, Current - Collector Pulsed (Icm): 113 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 54 A, Gate Charge: 145 nC, Test Condition: 400V, 30A, 9.1Ohm, 15V.
Інші пропозиції APT30GS60BRDLG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
APT30GS60BRDLG | Microsemi Corporation |
 Description: IGBT 600V 54A 250W TO247Switching Energy: 570µJ (off) Td (on/off) @ 25°C: 16ns/360ns IGBT Type: NPT Supplier Device Package: TO-247 Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Power - Max: 250 W Current - Collector Pulsed (Icm): 113 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 54 A Gate Charge: 145 nC Test Condition: 400V, 30A, 9.1Ohm, 15V |
товару немає в наявності |
В кошику од. на суму грн. |
| APT30GS60BRDLG | Microsemi |
IGBT Transistors Insulated Gate Bipolar Transistor - Resonant Mode - Combi |
товару немає в наявності |
В кошику од. на суму грн. |
| APT30GS60BRDLG |
|
Виробник: Microsemi Corporation
Description: IGBT 600V 54A 250W TO247
Switching Energy: 570µJ (off)
Td (on/off) @ 25°C: 16ns/360ns
IGBT Type: NPT
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 250 W
Current - Collector Pulsed (Icm): 113 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 54 A
Gate Charge: 145 nC
Test Condition: 400V, 30A, 9.1Ohm, 15V
Description: IGBT 600V 54A 250W TO247
Switching Energy: 570µJ (off)
Td (on/off) @ 25°C: 16ns/360ns
IGBT Type: NPT
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 250 W
Current - Collector Pulsed (Icm): 113 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 54 A
Gate Charge: 145 nC
Test Condition: 400V, 30A, 9.1Ohm, 15V
товару немає в наявності
В кошику
од. на суму грн.
| APT30GS60BRDLG |
|
Виробник: Microsemi
IGBT Transistors Insulated Gate Bipolar Transistor - Resonant Mode - Combi
IGBT Transistors Insulated Gate Bipolar Transistor - Resonant Mode - Combi
товару немає в наявності
В кошику
од. на суму грн.