Технічний опис APT30GS60BRDLG Microchip Technology
Description: IGBT 600V 54A 250W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A, Supplier Device Package: TO-247, IGBT Type: NPT, Td (on/off) @ 25°C: 16ns/360ns, Switching Energy: 570µJ (off), Test Condition: 400V, 30A, 9.1Ohm, 15V, Gate Charge: 145 nC, Current - Collector (Ic) (Max): 54 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 113 A, Power - Max: 250 W.
Інші пропозиції APT30GS60BRDLG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
APT30GS60BRDLG | Виробник : Microsemi Corporation |
 Description: IGBT 600V 54A 250W TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A Supplier Device Package: TO-247 IGBT Type: NPT Td (on/off) @ 25°C: 16ns/360ns Switching Energy: 570µJ (off) Test Condition: 400V, 30A, 9.1Ohm, 15V Gate Charge: 145 nC Current - Collector (Ic) (Max): 54 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 113 A Power - Max: 250 W |
товару немає в наявності |
|
| APT30GS60BRDLG | Виробник : Microsemi |
IGBT Transistors Insulated Gate Bipolar Transistor - Resonant Mode - Combi |
товару немає в наявності |