APT30GS60KRG Microsemi Corporation
Виробник: Microsemi CorporationDescription: IGBT 600V 54A 250W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: NPT
Td (on/off) @ 25°C: 16ns/360ns
Switching Energy: 570µJ (off)
Test Condition: 400V, 30A, 9.1Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 113 A
Power - Max: 250 W
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Технічний опис APT30GS60KRG Microsemi Corporation
Description: IGBT 600V 54A 250W TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A, Supplier Device Package: TO-220, IGBT Type: NPT, Td (on/off) @ 25°C: 16ns/360ns, Switching Energy: 570µJ (off), Test Condition: 400V, 30A, 9.1Ohm, 15V, Gate Charge: 145 nC, Current - Collector (Ic) (Max): 54 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 113 A, Power - Max: 250 W.
Інші пропозиції APT30GS60KRG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APT30GS60KRG | Виробник : Microsemi |
IGBT Transistors Insulated Gate Bipolar Transistor - NPT High Frequency - Single |
товару немає в наявності |