Технічний опис APT38N60SC6 MICROSEMI
Description: MOSFET N-CH 600V 38A D3PAK, Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: D3Pak, Vgs(th) (Max) @ Id: 3.5V @ 1.2mA, Power Dissipation (Max): 278W (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Bulk.
Інші пропозиції APT38N60SC6
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
APT38N60SC6 | Microsemi Corporation |
 Description: MOSFET N-CH 600V 38A D3PAKInput Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D3Pak Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
 |
APT38N60SC6 | Microchip / Microsemi |
MOSFET Power MOSFET - CoolMOS |
товару немає в наявності |
Мінімальне замовлення: 74 шт В кошику од. на суму грн. |
| APT38N60SC6 |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 600V 38A D3PAK
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D3Pak
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Bulk
Description: MOSFET N-CH 600V 38A D3PAK
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D3Pak
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| APT38N60SC6 |
|
Виробник: Microchip / Microsemi
MOSFET Power MOSFET - CoolMOS
MOSFET Power MOSFET - CoolMOS
товару немає в наявності
Мінімальне замовлення: 74 шт
В кошику
од. на суму грн.