Технічний опис APT53N60SC6 Microchip Technology
Description: MOSFET N-CH 600V 53A D3PAK, Packaging: Bulk, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 53A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 25.8A, 10V, Power Dissipation (Max): 417W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1.72mA, Supplier Device Package: D3Pak, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V.
Інші пропозиції APT53N60SC6
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
![]() |
APT53N60SC6 | Виробник : Microsemi Corporation |
Description: MOSFET N-CH 600V 53A D3PAK Packaging: Bulk Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 25.8A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1.72mA Supplier Device Package: D3Pak Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V |
товару немає в наявності |
|
![]() |
APT53N60SC6 | Виробник : Microchip / Microsemi |
![]() |
товару немає в наявності |