Технічний опис APT70GR65B2SCD30 Microchip Technology
Description: IGBT NPT 650V 134A TMAX, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 70A, Supplier Device Package: T-MAX™ [B2], IGBT Type: NPT, Td (on/off) @ 25°C: 19ns/170ns, Test Condition: 433V, 70A, 4.3Ohm, 15V, Gate Charge: 305 nC, Current - Collector (Ic) (Max): 134 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 260 A, Power - Max: 595 W.
Інші пропозиції APT70GR65B2SCD30
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APT70GR65B2SCD30 | Виробник : Microsemi Corporation |
Description: IGBT NPT 650V 134A TMAX Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 70A Supplier Device Package: T-MAX™ [B2] IGBT Type: NPT Td (on/off) @ 25°C: 19ns/170ns Test Condition: 433V, 70A, 4.3Ohm, 15V Gate Charge: 305 nC Current - Collector (Ic) (Max): 134 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 260 A Power - Max: 595 W |
товару немає в наявності |
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| APT70GR65B2SCD30 | Виробник : Microchip / Microsemi |
 IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8 |
товару немає в наявності |