Технічний опис APT94N65B2C3G MICROSEMI
Description: MOSFET N-CH 650V 94A T-MAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 94A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 47A, 10V, Power Dissipation (Max): 833W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 5.8mA, Supplier Device Package: T-MAX™ [B2], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 580 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13940 pF @ 25 V.
Інші пропозиції APT94N65B2C3G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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APT94N65B2C3G | Microsemi Corporation |
Description: MOSFET N-CH 650V 94A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 47A, 10V Power Dissipation (Max): 833W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 5.8mA Supplier Device Package: T-MAX™ [B2] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 580 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13940 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
APT94N65B2C3G | Microchip / Microsemi |
 MOSFET FG, MOSFET, 600V, 47 AMPS, TO-247 T-MAX |
товару немає в наявності |
В кошику од. на суму грн. |
| APT94N65B2C3G |
Виробник: Microsemi Corporation
Description: MOSFET N-CH 650V 94A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 47A, 10V
Power Dissipation (Max): 833W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5.8mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 580 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13940 pF @ 25 V
Description: MOSFET N-CH 650V 94A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 47A, 10V
Power Dissipation (Max): 833W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5.8mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 580 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13940 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| APT94N65B2C3G |
|
Виробник: Microchip / Microsemi
MOSFET FG, MOSFET, 600V, 47 AMPS, TO-247 T-MAX
MOSFET FG, MOSFET, 600V, 47 AMPS, TO-247 T-MAX
товару немає в наявності
В кошику
од. на суму грн.