APT9F100S Microsemi Corporation
Виробник: Microsemi Corporation
Description: MOSFET N-CH 1000V 9A D3PAK
Input Capacitance (Ciss) (Max) @ Vds: 2606 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D3Pak
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 337W (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
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Технічний опис APT9F100S Microsemi Corporation
Description: MOSFET N-CH 1000V 9A D3PAK, Input Capacitance (Ciss) (Max) @ Vds: 2606 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: D3Pak, Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 337W (Tc), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube.
