APTDC20H601G Microsemi Corporation
Виробник: Microsemi Corporation
Description: BRIDGE RECT 1PHASE 600V 20A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: SP1
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 20A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: SP1
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
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Технічний опис APTDC20H601G Microsemi Corporation
Description: BRIDGE RECT 1PHASE 600V 20A SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Diode Type: Single Phase, Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide Schottky, Supplier Device Package: SP1, Voltage - Peak Reverse (Max): 600 V, Current - Average Rectified (Io): 20 A, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Current - Reverse Leakage @ Vr: 400 µA @ 600 V.
Інші пропозиції APTDC20H601G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTDC20H601G | Виробник : Microchip / Microsemi | Discrete Semiconductor Modules Power Module - SiC |
товару немає в наявності |