Технічний опис APTGF660U60D4G MICROSEMI
Description: IGBT MODULE 600V 860A 2800W D4, Packaging: Bulk, Package / Case: D4, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 800A, NTC Thermistor: No, Supplier Device Package: D4, IGBT Type: NPT, Current - Collector (Ic) (Max): 860 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 2800 W, Current - Collector Cutoff (Max): 500 µA, Input Capacitance (Cies) @ Vce: 36 nF @ 25 V.
Інші пропозиції APTGF660U60D4G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTGF660U60D4G | Виробник : Microsemi Corporation |
 Description: IGBT MODULE 600V 860A 2800W D4Packaging: Bulk Package / Case: D4 Mounting Type: Chassis Mount Input: Standard Configuration: Single Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 800A NTC Thermistor: No Supplier Device Package: D4 IGBT Type: NPT Current - Collector (Ic) (Max): 860 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 2800 W Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 36 nF @ 25 V |
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