Технічний опис APTGV50H60BT3G Microchip Technology
Description: IGBT MODULE 600V 65A 250W SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Input: Standard, Configuration: Boost Chopper, Full Bridge, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: SP3, IGBT Type: NPT, Trench Field Stop, Current - Collector (Ic) (Max): 65 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 250 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V.
Інші пропозиції APTGV50H60BT3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTGV50H60BT3G | Виробник : Microsemi Corporation |
Description: IGBT MODULE 600V 65A 250W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Boost Chopper, Full Bridge Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: NPT, Trench Field Stop Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V |
товару немає в наявності |
||
| APTGV50H60BT3G | Виробник : Microsemi | IGBT Modules Power Module - IGBT |
товару немає в наявності |