Технічний опис APTM10DAM05TG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw, Electrical mounting: FASTON connectors; screw, Case: SP4, Mechanical mounting: screw, Semiconductor structure: diode/transistor, Drain current: 207A, Technology: POWER MOS 5®, Gate-source voltage: ±30V, Topology: boost chopper; NTC thermistor, Pulsed drain current: 1100A, Type of module: MOSFET transistor, On-state resistance: 5mΩ, Power dissipation: 780W, Drain-source voltage: 100V, кількість в упаковці: 1 шт.
Інші пропозиції APTM10DAM05TG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| APTM10DAM05TG | Виробник : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw Electrical mounting: FASTON connectors; screw Case: SP4 Mechanical mounting: screw Semiconductor structure: diode/transistor Drain current: 207A Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: boost chopper; NTC thermistor Pulsed drain current: 1100A Type of module: MOSFET transistor On-state resistance: 5mΩ Power dissipation: 780W Drain-source voltage: 100V кількість в упаковці: 1 шт |
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| APTM10DAM05TG | Виробник : Microsemi Corporation |
Description: MOSFET N-CH 100V 278A SP4 |
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| APTM10DAM05TG | Виробник : Microchip / Microsemi |
Discrete Semiconductor Modules DOR CC4126 |
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| APTM10DAM05TG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw Electrical mounting: FASTON connectors; screw Case: SP4 Mechanical mounting: screw Semiconductor structure: diode/transistor Drain current: 207A Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: boost chopper; NTC thermistor Pulsed drain current: 1100A Type of module: MOSFET transistor On-state resistance: 5mΩ Power dissipation: 780W Drain-source voltage: 100V |
товар відсутній |