Технічний опис APTM60A11FT1G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 600V; 30A; SP1; Press-in PCB; 390W, Drain-source voltage: 600V, Drain current: 30A, Pulsed drain current: 245A, Power dissipation: 390W, Case: SP1, Gate-source voltage: ±30V, On-state resistance: 0.11Ω, Topology: MOSFET half-bridge; NTC thermistor, Electrical mounting: Press-in PCB, Semiconductor structure: transistor/transistor, Technology: FREDFET; POWER MOS 8®, Mechanical mounting: screw, Type of semiconductor module: MOSFET transistor.
Інші пропозиції APTM60A11FT1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTM60A11FT1G | Виробник : Microsemi Corporation |
 Description: MOSFET 2N-CH 600V 40A SP1 |
товару немає в наявності |
||
| APTM60A11FT1G | Виробник : Microchip Technology |
MOSFET Modules PM-MOSFET-FREDFET-8-SP1 |
товару немає в наявності |
||
| APTM60A11FT1G | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 30A; SP1; Press-in PCB; 390W Drain-source voltage: 600V Drain current: 30A Pulsed drain current: 245A Power dissipation: 390W Case: SP1 Gate-source voltage: ±30V On-state resistance: 0.11Ω Topology: MOSFET half-bridge; NTC thermistor Electrical mounting: Press-in PCB Semiconductor structure: transistor/transistor Technology: FREDFET; POWER MOS 8® Mechanical mounting: screw Type of semiconductor module: MOSFET transistor |
товару немає в наявності |