BAS316,H3F Toshiba Semiconductor and Storage

Description: DIODE STANDARD 100V 250MA USC, Packaging: Tape & Reel (TR), Package / Case: SC-76, SOD-323, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 3 ns, Technology: Standard, Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz, Current - Average Rectified (Io): 250mA, Supplier Device Package: USC, Operating Temperature - Junction: 150°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 200 nA @ 80 V.