BC817K40WE6327 Infineon Technologies
Виробник: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: PG-SOT323-3-1
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Відгуки про товар
Написати відгук
Технічний опис BC817K40WE6327 Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 45 V, Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: PG-SOT323-3-1, Frequency - Transition: 170MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V, Current - Collector Cutoff (Max): 100nA (ICBO), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Bulk, Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA.
Інші пропозиції BC817K40WE6327
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
BC817K-40WE6327 | Виробник : Infineon Technologies |
Description: BIPOLAR GEN PURPOSE TRANSISTOR Power - Max: 500 mW Current - Collector (Ic) (Max): 500 mA Supplier Device Package: PG-SOT323-3-1 Frequency - Transition: 170MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Bulk Voltage - Collector Emitter Breakdown (Max): 45 V |
товару немає в наявності |
|
 |
BC 817K-40W E6327 | Виробник : Infineon Technologies |
Bipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.5A |
товару немає в наявності |