Технічний опис BFP420H6801 Infineon technologies
Description: RF TRANSISTOR, X BAND, NPN, Packaging: Bulk, Package / Case: SC-82A, SOT-343, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 21dB, Power - Max: 210mW, Current - Collector (Ic) (Max): 60mA, Voltage - Collector Emitter Breakdown (Max): 4.5V, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V, Frequency - Transition: 25GHz, Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz, Supplier Device Package: PG-SOT343-4-2, Part Status: Active.
Інші пропозиції BFP420H6801
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
BFP420H6801 | Виробник : Infineon Technologies |
 Description: RF TRANSISTOR, X BAND, NPNPackaging: Bulk Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 21dB Power - Max: 210mW Current - Collector (Ic) (Max): 60mA Voltage - Collector Emitter Breakdown (Max): 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Supplier Device Package: PG-SOT343-4-2 Part Status: Active |
товар відсутній |
|
 |
BFP 420 H6801 | Виробник : Infineon Technologies |
RF Bipolar Transistors RF BIP TRANSISTOR |
товар відсутній |