Технічний опис BSB280N15NZ3G Infineon
Description: BSB280N15 - 12V-300V N-CHANNEL P, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric MX, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: MG-WDSON-2-5, Vgs(th) (Max) @ Id: 4V @ 60µA, Power Dissipation (Max): 2.8W (Ta), 57W (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V.
Інші пропозиції BSB280N15NZ3G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| BSB280N15NZ3G | Infineon Technologies |
 Description: BSB280N15 - 12V-300V N-CHANNEL PCurrent - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric MX Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: MG-WDSON-2-5 Vgs(th) (Max) @ Id: 4V @ 60µA Power Dissipation (Max): 2.8W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
BSB280N15NZ3 G | Infineon Technologies |
MOSFET N-Ch 150V 30A CanPAK3 MZ OptiMOS 3 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. |
| BSB280N15NZ3G |
|
Виробник: Infineon Technologies
Description: BSB280N15 - 12V-300V N-CHANNEL P
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: MG-WDSON-2-5
Vgs(th) (Max) @ Id: 4V @ 60µA
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V
Description: BSB280N15 - 12V-300V N-CHANNEL P
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: MG-WDSON-2-5
Vgs(th) (Max) @ Id: 4V @ 60µA
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V
товару немає в наявності
В кошику
од. на суму грн.
| BSB280N15NZ3 G |
|
Виробник: Infineon Technologies
MOSFET N-Ch 150V 30A CanPAK3 MZ OptiMOS 3
MOSFET N-Ch 150V 30A CanPAK3 MZ OptiMOS 3
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.