BSC037N025SG
Виробник:
на замовлення 8639 шт:
термін постачання 14-28 дні (днів)
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Технічний опис BSC037N025SG
Description: MOSFET N-CH 25V 21A/100A TDSON, Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PG-TDSON-8-1, Vgs(th) (Max) @ Id: 2V @ 50µA, Power Dissipation (Max): 2.8W (Ta), 69W (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції BSC037N025SG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
BSC037N025S G | Infineon Technologies |
 Description: MOSFET N-CH 25V 21A/100A TDSONInput Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TDSON-8-1 Vgs(th) (Max) @ Id: 2V @ 50µA Power Dissipation (Max): 2.8W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. |
| BSC037N025S G |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 21A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 50µA
Power Dissipation (Max): 2.8W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 25V 21A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 50µA
Power Dissipation (Max): 2.8W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.