BSD314SPEL6327 Infineon technologies

Description: P-CHANNEL MOSFET, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-VSSOP, SC-88, SOT-363, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PG-SOT363-6-6, Vgs(th) (Max) @ Id: 2V @ 6.3µA.