Технічний опис BSD314SPEL6327 Infineon technologies
Description: P-CHANNEL MOSFET, Packaging: Bulk, Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 2V @ 6.3µA, Supplier Device Package: PG-SOT363-6-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 15 V.
Інші пропозиції BSD314SPEL6327
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
![]() |
BSD314SPEL6327 | Виробник : Infineon Technologies |
![]() Packaging: Bulk Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2V @ 6.3µA Supplier Device Package: PG-SOT363-6-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 15 V |
товару немає в наявності |
|
![]() |
BSD314SPE L6327 | Виробник : Infineon Technologies |
![]() Packaging: Bulk Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2V @ 6.3µA Supplier Device Package: PG-SOT363-6-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 15 V |
товару немає в наявності |
|
![]() |
BSD314SPE L6327 | Виробник : Infineon Technologies |
![]() |
товару немає в наявності |