DF10G6M4N,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 25VC 10DFN
Power Line Protection: No
Power - Peak Pulse: 30W
Voltage - Clamping (Max) @ Ipp: 25V
Voltage - Breakdown (Min): 5.6V
Bidirectional Channels: 4
Supplier Device Package: 10-DFN (2.5x1)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 0.2pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 10-UFDFN
Packaging: Tape & Reel (TR)
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Технічний опис DF10G6M4N,LF Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 25VC 10DFN, Power Line Protection: No, Power - Peak Pulse: 30W, Voltage - Clamping (Max) @ Ipp: 25V, Voltage - Breakdown (Min): 5.6V, Bidirectional Channels: 4, Supplier Device Package: 10-DFN (2.5x1), Voltage - Reverse Standoff (Typ): 5.5V (Max), Current - Peak Pulse (10/1000µs): 2A (8/20µs), Capacitance @ Frequency: 0.2pF @ 1MHz, Applications: General Purpose, Type: Zener, Mounting Type: Surface Mount, Package / Case: 10-UFDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DF10G6M4N,LF
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DF10G6M4N,LF | Виробник : Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 25VC 10DFN Power Line Protection: No Power - Peak Pulse: 30W Voltage - Clamping (Max) @ Ipp: 25V Voltage - Breakdown (Min): 5.6V Bidirectional Channels: 4 Supplier Device Package: 10-DFN (2.5x1) Voltage - Reverse Standoff (Typ): 5.5V (Max) Current - Peak Pulse (10/1000µs): 2A (8/20µs) Capacitance @ Frequency: 0.2pF @ 1MHz Applications: General Purpose Type: Zener Mounting Type: Surface Mount Package / Case: 10-UFDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
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DF10G6M4N,LF | Виробник : Toshiba |
ESD Protection Diodes / TVS Diodes ESD Protection Diode |
товару немає в наявності |