Технічний опис DG2020DV-T1-E3 Vishay Semiconductors
Description: IC SWITCH SPDT X 1 1.6OHM 6TSOP, Number of Circuits: 1, Current - Leakage (IS(off)) (Max): 5.3nA, Channel Capacitance (CS(off), CD(off)): 65pF, Switch Time (Ton, Toff) (Max): 6µs, 4µs, Multiplexer/Demultiplexer Circuit: 2:1, Switch Circuit: SPDT, Crosstalk: -54dB @ 1MHz, Charge Injection: 5pC, Voltage - Supply, Single (V+): 2.7V ~ 5.5V, Supplier Device Package: 6-TSOP, On-State Resistance (Max): 1.6Ohm, Operating Temperature: -40°C ~ 85°C (TA), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).
Інші пропозиції DG2020DV-T1-E3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
DG2020DV-T1-E3 | Виробник : Vishay Siliconix |
Description: IC SWITCH SPDT X 1 1.6OHM 6TSOPNumber of Circuits: 1 Current - Leakage (IS(off)) (Max): 5.3nA Channel Capacitance (CS(off), CD(off)): 65pF Switch Time (Ton, Toff) (Max): 6µs, 4µs Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -54dB @ 1MHz Charge Injection: 5pC Voltage - Supply, Single (V+): 2.7V ~ 5.5V Supplier Device Package: 6-TSOP On-State Resistance (Max): 1.6Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
товару немає в наявності |

