Технічний опис DG2026DQ-T1-E3 Vishay Semiconductors
Description: IC SWITCH SPDT X 2 4OHM 10MSOP, Number of Circuits: 2, Current - Leakage (IS(off)) (Max): 1nA, Channel Capacitance (CS(off), CD(off)): 14pF, Switch Time (Ton, Toff) (Max): 48ns, 33ns, Multiplexer/Demultiplexer Circuit: 2:1, Switch Circuit: SPDT, Crosstalk: -82dB @ 1MHz, Charge Injection: 79pC, Voltage - Supply, Single (V+): 1.8V ~ 5.5V, Supplier Device Package: 10-MSOP, On-State Resistance (Max): 4Ohm, Operating Temperature: -40°C ~ 85°C (TA), Mounting Type: Surface Mount, Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції DG2026DQ-T1-E3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DG2026DQ-T1-E3 | Виробник : Vishay Siliconix |
Description: IC SWITCH SPDT X 2 4OHM 10MSOP Number of Circuits: 2 Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 14pF Switch Time (Ton, Toff) (Max): 48ns, 33ns Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -82dB @ 1MHz Charge Injection: 79pC Voltage - Supply, Single (V+): 1.8V ~ 5.5V Supplier Device Package: 10-MSOP On-State Resistance (Max): 4Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Packaging: Tape & Reel (TR) |
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