FCH76N60NF Fairchild Semiconductor
Виробник: Fairchild SemiconductorDescription: POWER FIELD-EFFECT TRANSISTOR, 7
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72.8A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 38A, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11045 pF @ 100 V
на замовлення 949 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 859.57 грн |
Відгуки про товар
Написати відгук
Технічний опис FCH76N60NF Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 7, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 72.8A (Tc), Rds On (Max) @ Id, Vgs: 38mOhm @ 38A, 10V, Power Dissipation (Max): 543W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11045 pF @ 100 V.
Інші пропозиції FCH76N60NF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
FCH76N60NF | Виробник : ON Semiconductor |
Trans MOSFET N-CH 600V 72.8A 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
|
| FCH76N60NF | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 46A; Idm: 218A; 543W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 46A Pulsed drain current: 218A Power dissipation: 543W Case: TO247 Gate-source voltage: ±30V On-state resistance: 28.7mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
||
 |
FCH76N60NF | Виробник : onsemi / Fairchild |
MOSFET 600V N-Chan MOSFET FRFET, SupreMOS |
товар відсутній |
|
| FCH76N60NF | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 46A; Idm: 218A; 543W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 46A Pulsed drain current: 218A Power dissipation: 543W Case: TO247 Gate-source voltage: ±30V On-state resistance: 28.7mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |