FCPF380N60E_F152 Fairchild Semiconductor

Description: FCPF380N60E - Power MOSFET, N-C, Part Status: Obsolete, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220F-3, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 31W (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack.