Технічний опис FDC6506P ONS/FAI
Description: MOSFET 2P-CH 30V 1.8A SSOT6, Part Status: Obsolete, Supplier Device Package: SuperSOT™-6, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 1.8A, Drain to Source Voltage (Vdss): 30V, Power - Max: 700mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).
Інші пропозиції FDC6506P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
FDC6506P | onsemi |
 Description: MOSFET 2P-CH 30V 1.8A SSOT6Part Status: Obsolete Supplier Device Package: SuperSOT™-6 Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V Current - Continuous Drain (Id) @ 25°C: 1.8A Drain to Source Voltage (Vdss): 30V Power - Max: 700mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
FDC6506P | onsemi / Fairchild |
MOSFET SSOT-6 P-CH -30V |
товару немає в наявності |
В кошику од. на суму грн. |
| FDC6506P |
|
Виробник: onsemi
Description: MOSFET 2P-CH 30V 1.8A SSOT6
Part Status: Obsolete
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 30V 1.8A SSOT6
Part Status: Obsolete
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| FDC6506P |
|
Виробник: onsemi / Fairchild
MOSFET SSOT-6 P-CH -30V
MOSFET SSOT-6 P-CH -30V
товару немає в наявності
В кошику
од. на суму грн.